CHARACTERIZATIONS OF ANNEALED ION IMPLANTED SILICON CARBIDE MATERIALS AND DEVICES

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" CHARACTERIZATIONS OF ANNEALED ION IMPLANTED SILICON CARBIDE MATERIALS AND DEVICES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149077
Doc. No	:	ET20869
Main Entry	:	Xin Zhang
Title Proper	:	CHARACTERIZATIONS OF ANNEALED ION IMPLANTED SILICON CARBIDE MATERIALS AND DEVICES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Silicon carbide (SiC) materials have unique materials properties, such as highgood thermal conductivity ,high saturated velocity and high breakdown field, whichmake them attractive many applications in the areas of high temperature, highfrequency and high power devices. Despite of the superior materials properties of SiCas listed above , it is difficult.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44015.pdf
Title and statement of responsibility and	:	CHARACTERIZATIONS OF ANNEALED ION IMPLANTED SILICON CARBIDE MATERIALS AND DEVICES [Thesis]