A HIGH-SPEED RF SWITCH USING SHIFTED-GATE PHEMTS

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" A HIGH-SPEED RF SWITCH USING SHIFTED-GATE PHEMTS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148989
Doc. No	:	ET20781
Main Entry	:	CHRISTOPHER W. LIESSNER
Title Proper	:	A HIGH-SPEED RF SWITCH USING SHIFTED-GATE PHEMTS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	In many radio frequency (RF) applications, small, high-power, high-speedswitches are vital. Currently, pseudomorphic High Electron Mobility Transistors(pHEMTs) are considered among the fastest of the semiconductor devices, capable ofoperating up to 100 GHz. A topology using simple but modified series and shuntelements was designed to improve upon the switching speed of a RF switch. Each.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43926.pdf
Title and statement of responsibility and	:	A HIGH-SPEED RF SWITCH USING SHIFTED-GATE PHEMTS [Thesis]