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Document Type : Latin Dissertation
Language of Document : English
Record Number : 148986
Doc. No : ET20778
Main Entry : Sridhar Kuchibhatla
Title Proper : GALLIUM NITRIDE BASED BLUE LASER DIODES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Group III nitride wide band gap semiconductors have recently attracted considerableattention due to their applications for optical devices operating in the blue and UVwavelength regions. Nitride materials are stable at high temperatures and also chemicallystable. Analysis of InGaN based blue laser diodes is required for the research anddevelopment of future deep UV laser diodes for bio-sensing applications. Theconventional multiple quantum wells suffer from inhomogeneous carrier distributionacross quantum wells. This inhomogeneous distribution increases the threshold currentdensity of the laser diode. This project addresses the issue through the design of a novelstructure for the active region of InGaN blue laser diodes. As a possible replacement forthe AlGaN cladding layers optical properties.
Subject : Electericl tess
: برق
electronic file name : TL43923.pdf
Title and statement of responsibility and : GALLIUM NITRIDE BASED BLUE LASER DIODES [Thesis]
 
 
 
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