MODELING OF A DOUBLE-GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)

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" MODELING OF A DOUBLE-GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148923
Doc. No	:	ET20715
Main Entry	:	THOMAS ALLEN PHILLIPS
Title Proper	:	MODELING OF A DOUBLE-GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Recently, the fabrication of a double-gate MOSFET SO1 (silicon on insulator) device hasbeen reported. The goal of this project was to develop a finite difference model (FDM) and anEKV compact model to simulate the operation of the double-gate MOSFET. The finitedifference method was used to discretize the semiconductor equations over a two-dimensional,.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43855.pdf
Title and statement of responsibility and	:	MODELING OF A DOUBLE-GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) [Thesis]