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Document Type : Latin Dissertation
Language of Document : English
Record Number : 148893
Doc. No : ET20685
Main Entry : Kejun Xia
Title Proper : IMPROVED RF NOISE MODELING FOR SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Accurate radio frequency (RF) noise models for individual transistors are critical to minimizenoise during mixed-signal analog and RF circuit design. This dissertation proposes twoimproved RF noise models for SiGe Heterojunction Bipolar Transistors (SiGe HBTs), a semiempiricalmodel and a physical model. A new parameter extraction method for small signal equivalentcircuit of SiGe HBT has also been developed.The semi-empirical model extracts intrinsic base and collector current noise from measureddevice noise parameters using standard noise de-embedding method based on a quasi-static inputequivalent circuit. Equations.
Subject : Electericl tess
: برق
electronic file name : TL43825.pdf
Title and statement of responsibility and : IMPROVED RF NOISE MODELING FOR SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS [Thesis]
 
 
 
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