HIGH TEMPERATURE HIGH POWER SiC DEVICES PACKAGING PROCESSES AND MATERIALS DEVELOPMENT

منو

" HIGH TEMPERATURE HIGH POWER SiC DEVICES PACKAGING PROCESSES AND MATERIALS DEVELOPMENT "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148813
Doc. No	:	ET20605
Main Entry	:	Cai Wang
Title Proper	:	HIGH TEMPERATURE HIGH POWER SiC DEVICES PACKAGING PROCESSES AND MATERIALS DEVELOPMENT
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Silicon power devices have reached their theoretical limits in terms of highertemperature and higher power operation by virtue of the physical properties of thematerial. SiC has been identified as a material with the potential to replace Si devicesbecause of its superior material advantages. However, there is a lack of reliablepackaging techniques and materials for SiC, in particular die attach, wire bonding and diepassivation that can survive temperature as high as 500C.Based on the high melting point of Au-In alloy (81/19 wt ), it was evaluated as apotential high temperature die attach material using a transient liquid phase bonding.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43745.pdf
Title and statement of responsibility and	:	HIGH TEMPERATURE HIGH POWER SiC DEVICES PACKAGING PROCESSES AND MATERIALS DEVELOPMENT [Thesis]