HIGH POWER GRATING-OUTCOUPLED SURFACE-EMITTING SEMICONDUCTOR LASER

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" HIGH POWER GRATING-OUTCOUPLED SURFACE-EMITTING SEMICONDUCTOR LASER "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148809
Doc. No	:	ET20601
Main Entry	:	Susan Lynn Wilson
Title Proper	:	HIGH POWER GRATING-OUTCOUPLED SURFACE-EMITTING SEMICONDUCTOR LASER
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	High power (10 W) and high brightness semiconductor lasers at a wavelength of975 nm are desirable for pumping of fiber lasers and solid state lasers. Currenttechnology uses edge emitting diodes which have poor beam quality and are limited inpower output due to catastrophic optical damage at the edge facets. Dr. Alan Paxtonproposed a novel shaped.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43741.pdf
Title and statement of responsibility and	:	HIGH POWER GRATING-OUTCOUPLED SURFACE-EMITTING SEMICONDUCTOR LASER [Thesis]