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Document Type : Latin Dissertation
Language of Document : English
Record Number : 148776
Doc. No : ET20568
Main Entry : Xiaoping Liang
Title Proper : Analytical Modeling of Short Channel Effects in Double Gate MOSFET
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : aT Process description up to raised source and drain. 1E TG patterning andencapsulation oxide deposition. 2s Bonding. 3s Initial substrate and BOXremoval. 4w BG patterning with alignment on the same e-beam marks as theones used for TG, extension implant, spacer formation, source/drain selectiveepitaxy growth and implant, and nickel salicidation. Back-end follows astandard CMOS sequence. (b) TEM cross section of a 10-nm-gate-lengthplanar double-metal-gate transistor with a 10-nm channel thickness with raisednickel silicided source and drain and poly-TiN gate. Inset: TEM cross sectionof a 20-nm perfectly aligned DGMOSFET..
Subject : Electericl tess
: برق
electronic file name : TL43707.pdf
Title and statement of responsibility and : Analytical Modeling of Short Channel Effects in Double Gate MOSFET [Thesis]
 
 
 
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