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Document Type : Latin Dissertation
Language of Document : English
Record Number : 148719
Doc. No : ET20511
Main Entry : KARAN DEEP
Title Proper : SIMULATION AND E-BEAM PATTERNING OF SINGLE ELECTRON TRANSISTOR
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Electron beam lithography is gaining widespread use as semiconductor industry.Current optical lithography techniques are limited to resolution of few hundreds ofnanometers and suffer from diffraction problems.The focus of this thesis is to pattern single electron transistors (SET) usingelectron beam lithography on silicon and silicon on insulator (SOI) substrate which canbe further processed to form working SET device. We used different types of e-beamresists like UVN 30, PMMA and HSQ to define source, drain and island for SET. Wedemonstrated the use of RIE and Deep RIE to etch silicon by using resist as etch mask..
Subject : Electericl tess
: برق
electronic file name : TL43648.pdf
Title and statement of responsibility and : SIMULATION AND E-BEAM PATTERNING OF SINGLE ELECTRON TRANSISTOR [Thesis]
 
 
 
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