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Document Type : Latin Dissertation
Language of Document : English
Record Number : 148688
Doc. No : ET20480
Main Entry : SCOTT COREY WOLFSON
Title Proper : PROGRAM, ERASE, AND READ TRANSIENT MODELS FOR A FLASH EEPROM
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : In electronic devices on the market today there is an increasing requirement fordenser memory that requires less power and provides faster access times. An importantrequirement in the development of future flash memory is accurate modeling prior to thefabrication process. This thesis presents the simulations that can accurately model thetransient response of flash memory during programming, erasing and reading. Threeapproaches will be presented to simulate the programming transients that span from a lowresolution model which uses many assumptions to a high resolution model that was basedupon a nonquasi-static MOSFET model. Three models are also presented that simulatethe transient erase process. These models consist of the substrate, drain, and source erasewhere special emphasis has been placed on the substrate erase model because it is the.
Subject : Electericl tess
: برق
electronic file name : TL43617.pdf
Title and statement of responsibility and : PROGRAM, ERASE, AND READ TRANSIENT MODELS FOR A FLASH EEPROM [Thesis]
 
 
 
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