A PHYSICALLY-DERIVED LARGE-SIGNAL NONQUASI-STATIC MOSFET MODEL FOR COMPUTER AIDED DEVICE AND CIRCUIT SIMULATION

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" A PHYSICALLY-DERIVED LARGE-SIGNAL NONQUASI-STATIC MOSFET MODEL FOR COMPUTER AIDED DEVICE AND CIRCUIT SIMULATION "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148598
Doc. No	:	ET20390
Main Entry	:	MICHAEL WALTER PAYTON
Title Proper	:	A PHYSICALLY-DERIVED LARGE-SIGNAL NONQUASI-STATIC MOSFET MODEL FOR COMPUTER AIDED DEVICE AND CIRCUIT SIMULATION
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	This thesis presents a large-signal nonquasi-static model for the transient analysisof MOSFET devices and circuits. The nonquasi-static model is based on MOSFETdevice physics as opposed to empirical methodologies is valid in all three regions ofdevice operation: weak, moderate, and strong inversion. The nonquasi-static model isimplemented within a CAD software package that provides for the numerical simulationof both individual MOSFET devices and CMOS logic circuits. The CAD softwarecalculates the transient terminal currents and voltages.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43522.pdf
Title and statement of responsibility and	:	A PHYSICALLY-DERIVED LARGE-SIGNAL NONQUASI-STATIC MOSFET MODEL FOR COMPUTER AIDED DEVICE AND CIRCUIT SIMULATION [Thesis]