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Document Type : Latin Dissertation
Language of Document : English
Record Number : 148588
Doc. No : ET20380
Main Entry : Mohammed Jameel GIawi
Title Proper : A THREE-DIMENSIONAL ANALYTICAL MODEL FOR SMALL-GEOMETRY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : An analytical three-dimensional model for small-geometry Metal OxideSemiconductor Field Effect Transistors (MOSFETs) has been developed for the fullyrecessed oxide isolation scheme based on the charge sheet approximation. This modelsimultaneously solves the threedimensional Poisson's equation and the one-dimensionalcurrent continuity equation using the Fourier analysis method making it much faster thannumerical models. The analytical.
Subject : Electericl tess
: برق
electronic file name : TL43507.pdf
Title and statement of responsibility and : A THREE-DIMENSIONAL ANALYTICAL MODEL FOR SMALL-GEOMETRY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR [Thesis]
 
 
 
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