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" SWITCHING IN MAGNETIC MEMORY ELEMENT OF TOGGLE MODE MAGNETORESISTIVE RANDOM ACCESS MEMORY "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 148547
Doc. No : ET20339
Main Entry : SHENGYUAN WANG
Title Proper : SWITCHING IN MAGNETIC MEMORY ELEMENT OF TOGGLE MODE MAGNETORESISTIVE RANDOM ACCESS MEMORY
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Switching behavior of synthetic antiferromagnet (SAF) structure to be used as thememory elements of the "Toggle-Mode Magnetoresistive Random Access Memory(T-MRAM)" recently invented as a breakthrough for solving the critical problemon operating field margin and scalability encountered in developing MRAMs wasinvestigated.By using analytical methods with an aid of numerical calculations, the critical.
Subject : Electericl tess
: برق
electronic file name : TL43466.pdf
Title and statement of responsibility and : SWITCHING IN MAGNETIC MEMORY ELEMENT OF TOGGLE MODE MAGNETORESISTIVE RANDOM ACCESS MEMORY [Thesis]
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TL43466.pdf
TL43466.pdf
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